1300 nm 28 Gbps NRZ DFB Laser Diode Chips

  • Designed for uncooled 28 Gbps NRZ
  • Operating temperature -20 °C to 95 °C
  • Qualified according to GR-468 for use in non-hermetic packages
  • Excellent reliability
  • Top anode and backside cathode configuration
  • RoHS compliant
  • Available wavelengths
    • CWDM 1270 nm to 1370 nm
    • LWDM 1269.23 nm to 1318.35 nm

 

Applications

  • Fiber optical communication links
  • Gigabit Ethernet and storage area networks
  • 5G Wireless front-haul datalinks


Shipment packaging options

  • Diced wafer on UV tape with grip ring Ø 150mm

 

1300 nm 28 Gbps NRZ DFB Laser Diode Chips

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IND02Dn00D102, IND02Cn00D102, IND02Ln00D102, IND02Bn00D102

 

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